01. Defects in Sr2FeMoO6.

01. Defects in Sr2FeMoO6.

R. Mishra, O. D. Restrepo, P. M. Woodward, W. Windl, Chem. Mater. 22, 6092 (2010).

02. Polarization in GaN/AlN heterostructures

02. Polarization in GaN/AlN heterostructures

R. Mishra, O. D. Restrepo, S. Rajan, W. Windl, Appl. Phys. Lett. 98, 232114 (2011).

03. Electronic structure of LiFePO4 nanoparticles

03. Electronic structure of LiFePO4 nanoparticles

S. C. Nagpure, S. S. Babu, B. Bhushan, A. Kumar, R. Mishra, W. Windl, L. Kovarik, M. Mills, Acta Mater. 59, 69147 (2011).

04. Magnetic order arising from chemical chaos in a complex oxide

04. Magnetic order arising from chemical chaos in a complex oxide

R. Mishra, J. R. Soliz, P. M. Woodward, W. Windl, Chem. Mater. 24, 2757 (2012).

05. Native point defects in binary InP semiconductors.

05. Native point defects in binary InP semiconductors.

R. Mishra, O. D. Restrepo, A. Kumar, W. Windl, J. Mater. Sci. 47, 7482 (2012).

06. Engineering the electrostatic landscape of semiconductor surfaces

06. Engineering the electrostatic landscape of semiconductor surfaces

D. Gohlke, R. Mishra, O. D. Restrepo, D. Lee, W. Windl, J. A. Gupta, Nano Letters 13, 2418 (2013).

07. Defect states and disorder in semiconductor nanowires

07. Defect states and disorder in semiconductor nanowires

D. Ko, X. W. Zhao, K. M. Reddy, O. D. Restrepo, R. Mishra, T. R. Lemberger, I. S. Beloborodov, N. Trivedi, N. P. Padture, W. Windl, F. Y. Yang, E. Johnston-Halperin, J. Appl. Phys. 114, 043711 (2013).

08. An embedded atom method potential of beryllium.

08. An embedded atom method potential of beryllium.

A. Agrawal, R. Mishra, L. Ward, K. M. Flores, W. Windl, Modelling Simul. Mater. Sci. Eng. 21, 085001 (2013).

09. Prediction of a 2-D dilute magnetic semiconductor

09. Prediction of a 2-D dilute magnetic semiconductor

R. Mishra, W. Zhou, S. J. Pennycook, S. T. Pantelides, J.-C. Idrobo, Phys. Rev. B 88, 144409 (2013).

10. Ordering of two magnetic sublattices in Sr<sub>2</sub>CoOsO<sub>6</sub>

10. Ordering of two magnetic sublattices in Sr2CoOsO6

R. Morrow, R. Mishra, W. Windl, S. Wurmehl, U. Stockert, B. Buchner, P. M. Woodward, J. Am. Chem. Soc. 135, 18824 (2013).

11. Tunable gaps and enhanced mobilities in silicane

11. Tunable gaps and enhanced mobilities in silicane

O. D. Restrepo, R. Mishra, J. E. Goldeberger, W. Windl, J. Appl. Phys. 115, 033711 (2014).

12. p-type doping of MoS<sub>2</sub> thin films using Nb

12. p-type doping of MoS2 thin films using Nb

M. Laskar et al., Appl. Phys. Lett. 104, 092104 (2014).

13. O-vacancy-induced polarization in an oxide superlattice

13. O-vacancy-induced polarization in an oxide superlattice

R. Mishra, Y.-M. Kim, J. Salafranca, S. K. Kim, S. Chang, A. Bhattacharya, D. D. Fong, S. J. Pennycook, S. T. Pantelides, A. Y. Borisevich, Nano Letters 14, 2694 (2014).

14. Observation of ferroelectric field effect and screening

14. Observation of ferroelectric field effect and screening

Y.-M. Kim et al., Nature Mater. 13, 1019 (2014).

15. Direct observation of dopant atom diffusion

15. Direct observation of dopant atom diffusion

R. Ishikawa, R. Mishra, A. R. Lupini, S. D. Findlay, T. Taniguchi, S. T. Pantelides, S. J. Pennycook, Phys. Rev. Lett. 113, 155501 (2014).